IRF BG30 N Channel Mosfet To-220(PULL OUT)

IRF BG30 1000V 3A N CHANNEL POWER MOSFET TO-220(PULL OUT)

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB co.

The IRF BG30 MOSFET is a high-voltage, low-current N-Channel power transistor, designed for switching applications, industrial electronics, and power supplies. With an impressive 1000V voltage rating and 3A current handling capacity, this MOSFET is ideal for high-voltage circuits that require efficient power management and reliable switching.

• Designed for high-voltage applications, ensuring stable and efficient performance.
• Minimizes power loss, improving overall circuit performance.
• Ensures quick response times, making it suitable for switch-mode power supplies and industrial converters.
• The MOSFET BG30 is designed with a robust TO-220 package, allowing better thermal management and increased durability.
• Ideal for power conversion systems, high-voltage regulators, industrial automation, and inverter circuits.

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche-rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB co

For complete technical specifications, electrical characteristics, and circuit design guidelines, refer to the IRF BG30 datasheet.