TK100E10N1 N-CHANNEL POWER MOSFET TO 220 (PULL OUT)

TK100E10N1 N-CHANNEL POWER MOSFET TO 220 (PULL OUT)

The TK100E10N1 N-Channel Power MOSFET (TO-220, Pull Out) is a high-performance semiconductor designed to handle high power applications with efficiency and reliability. Whether you’re working on power supplies, motor control, or high-speed switching circuits, this MOSFET delivers low RDS(on), fast switching speeds, and excellent thermal performance.

If you’re looking for a dependable, high-power N-channel MOSFET, the TK100E10N1 pull-out MOSFET is an excellent choice. It is engineered to deliver superior electrical performance while ensuring thermal stability and durability in various applications.

Product Features & Specifications:

• Type: N-Channel
• Maximum Continuous:
• Drain Current: 207 A
• Maximum Drain Source: Voltage:
• 100 Volt
• Package Type: TO-220
• Mounting Type: Through Hole
• Maximum Drain Source Resistance:
• 4 mΩ
• Maximum Gate Threshold Voltage: 4Volt
• Maximum Power Dissipation:
• 255 W
• Transistor Configuration:
• Single
• Maximum Gate Source Voltage:
• -20 V, +20 V
• Width: 4.45mm
• Maximum Operating Temperature:
• +150 °C
• The TK100E10N1 MOSFET offers low on-resistance (RDS(on)), ensuring minimal power loss and enhanced energy efficiency.
• Ideal for high-frequency applications, providing quick response times in demanding electronic circuits.
• The robust TO-220 form factor enhances heat dissipation, making it suitable for high-power applications.
• Built to withstand high voltage and current loads, ensuring long-term stability in industrial and consumer electronics.
• Perfect for SMPS, inverters, DC-DC converters, motor drives, and power amplification.

For technical specifications, electrical characteristics, and application guidelines, refer to the TK100E10N1 datasheet.