K2611 N-CHANNEL POWER MOSFET TO-247 PULL OUT

K2611 N-CHANNEL POWER MOSFET TO-247 PULL OUT

The K2611 N-Channel Power MOSFET is a high-performance transistor designed for high-power applications requiring superior efficiency and reliability. With its TO-247 package, this MOSFET ensures better thermal management, making it an excellent choice for power supplies, motor drivers, and high-speed switching applications.

This N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

If you’re looking for a powerful, energy-efficient, and durable MOSFET, the K2611 is a top-tier choice. Whether you’re designing power inverters, industrial automation circuits, or high-power amplifiers, this component delivers exceptional electrical performance with minimal heat generation.

Key Features & Benefits:

• The K2611 MOSFET is engineered to handle high voltages and currents, ensuring stable performance under heavy loads.
• Reduces power losses, making your circuit more energy-efficient and heat-resistant.
• Perfect for high-frequency applications, ensuring quick response times in demanding electronic circuits.
• The K2611 pull-out MOSFET is designed to prevent overheating, ensuring long-lasting performance.
• Ideal for switching power supplies, motor control systems, industrial electronics, and high-voltage circuits.

Product Specification:

• Type Designator: K2611
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel
• Maximum Power Dissipation (Pd): 300 W
• Maximum Drain-Source Voltage |Vds|: 900 V
• Maximum Gate-Source Voltage |Vgs|: 30 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
• Maximum Drain Current |Id|: 11 A
• Maximum Junction Temperature (Tj): 150 °C
• Total Gate Charge (Qg): 72 nC
• Rise Time (tr): 135 nS
• Drain-Source Capacitance (Cd): 260 pF
• Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm
• Package: TO-247

For complete technical specifications and electrical characteristics, check the K2611 datasheet.