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IRF BG30 1000V 3A N CHANNEL POWER MOSFET TO-220(PULL OUT)

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87 in stock

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IRF BG30 1000V 3A N CHANNEL POWER MOSFET TO-220(PULL OUT)

FEATURES

  • Dynamic dV/dt rating
  • Repetitive avalanche-rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Material categorization: for definitions of compliance

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB co

 

SKU: BG30-FET Categories: , Tag:

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